This job was posted by https://www.vermontjoblink.com : For more information, please see: https://www.vermontjoblink.com/jobs/1209633 About GlobalFoundries

GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world\'s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.

Internship Program Overview:

Our Interns & Co-ops are our entry-level talent pipeline for GF across the globe. Our goal is to provide students with meaningful work experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation. As an intern at GF, you\'ll experience one-on-one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.

Summary of Role:

We are seeking highly motivated students with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9). Interns will embed within our project teams of process, integration, and device engineers in developing new process flows in CMOS, SiGe, and GaN technologies, targeting new and improved semiconductor applications.

Essential Responsibilities include:

• Initial and primary responsibilities include working with the technology development integration and process teams as well as test and device engineers in driving the process development of advanced process modules to be used in the technology to meet performance, reliability, yield, and cost objectives.

{=html} <!-- --> - Develop differentiated offerings in 130nm, 90nm, and sub 90nm nodes in CMOS, SiGe, and GaN technologies targeting new and improved GaN applications.For example, thin film Atomic Level Deposition and Low Temperature High K Dielectric Films

{=html} <!-- --> - Additional responsibilities include leading and driving interactions with various engineering teams outside the immediate area, e.g., testing, failure analysis, unit process, reliability, manufacturing, and research organizations, to facilitate and achieve program success.

{=html} <!-- --> - Support technology development qualification milestones from conception through manufacturing installation. Support experimental design and execution. Analyze experimental and performance results, including constructional analysis, and inline measurement summarization for manufacturing capability assessments and defect level assessments.

Other Responsibilities:

• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications:

• Education - Actively pursuing a Bachelor\'s in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science, or other relevant engineering or physical science discipline.

{=html} <!-- --> - A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing.

{=html} <!-- --> - Language Fluency - English (Written & Verbal)

{=html} <!-- --> - Ability to work at least on site for 40 hours per week during the internship.

Preferred Qualifications:

• Actively pursuing a Master\'s degree or Ph.D. in Electrical Engineering, Solid State Phys cs, Microelectronics, Chemical Engineering, Material Science, or other relevant engineering or physical science discipline.

{=html} <!-- --> - Prior related internship or co-op experience

{=html} <!-- --> - Project management skills, i.e. the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.

{=html} <!-- --> - Strong written and verbal communication skills

{=html} <!-- --> - Strong planning & organizational skills

{=html} <!-- --> - Educational experience in modern device physics (FET, BJT, LDMOS, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures.

{=html} <!-- --> - Experience in semiconductor processing in CMOS, SiGe, and/or GaN technologies for RF and Power applications.

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Expected Salary Range

\$20.00 - \$40.00

Expected Salary Range

\$0.00 - \$0.00

The exact Salary will be determined based on qualifications, experience and location.

If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of you